Evidence for a topological excitonic insulator in InAs/GaSb bilayers

	Evidence for a topological excitonic insulator in InAs/GaSb bilayers
	Lingjie Du; Xinwei Li; Wenkai Lou; Gerard Sullivan; Kai Chang; Junichiro Kono; Rui-Rui Du
	2017
Source Publication	NATURE COMMUNICATIONS
Volume	8 Pages:1971
Subject Area	半导体物理
Indexed By	SCI
Date Available	2018-06-01
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28494
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Lingjie Du,Xinwei Li,Wenkai Lou,et al. Evidence for a topological excitonic insulator in InAs/GaSb bilayers[J]. NATURE COMMUNICATIONS,2017,8:1971.
APA	Lingjie Du.,Xinwei Li.,Wenkai Lou.,Gerard Sullivan.,Kai Chang.,...&Rui-Rui Du.(2017).Evidence for a topological excitonic insulator in InAs/GaSb bilayers.NATURE COMMUNICATIONS,8,1971.
MLA	Lingjie Du,et al."Evidence for a topological excitonic insulator in InAs/GaSb bilayers".NATURE COMMUNICATIONS 8(2017):1971.

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