SEMI OpenIR  > 半导体超晶格国家重点实验室
Evidence for a topological excitonic insulator in InAs/GaSb bilayers
Lingjie Du; Xinwei Li; Wenkai Lou; Gerard Sullivan; Kai Chang; Junichiro Kono; Rui-Rui Du
2017
Source PublicationNATURE COMMUNICATIONS
Volume8Pages:1971
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-01
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28494
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Lingjie Du,Xinwei Li,Wenkai Lou,et al. Evidence for a topological excitonic insulator in InAs/GaSb bilayers[J]. NATURE COMMUNICATIONS,2017,8:1971.
APA Lingjie Du.,Xinwei Li.,Wenkai Lou.,Gerard Sullivan.,Kai Chang.,...&Rui-Rui Du.(2017).Evidence for a topological excitonic insulator in InAs/GaSb bilayers.NATURE COMMUNICATIONS,8,1971.
MLA Lingjie Du,et al."Evidence for a topological excitonic insulator in InAs/GaSb bilayers".NATURE COMMUNICATIONS 8(2017):1971.
Files in This Item:
File Name/Size DocType Version Access License
Evidence for a topol(1177KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Lingjie Du]'s Articles
[Xinwei Li]'s Articles
[Wenkai Lou]'s Articles
Baidu academic
Similar articles in Baidu academic
[Lingjie Du]'s Articles
[Xinwei Li]'s Articles
[Wenkai Lou]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Lingjie Du]'s Articles
[Xinwei Li]'s Articles
[Wenkai Lou]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.