SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates
Xiaoye Wang; Wenyuan Yang; Baojun Wang; Xianghai Ji; Shengyong Xu; Wei Wang; Qing Chen; Tao Yang
2017
Source PublicationJournal of Crystal Growth
Volume460Pages:1-4
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28423
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xiaoye Wang,Wenyuan Yang,Baojun Wang,et al. Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates[J]. Journal of Crystal Growth,2017,460:1-4.
APA Xiaoye Wang.,Wenyuan Yang.,Baojun Wang.,Xianghai Ji.,Shengyong Xu.,...&Tao Yang.(2017).Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates.Journal of Crystal Growth,460,1-4.
MLA Xiaoye Wang,et al."Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates".Journal of Crystal Growth 460(2017):1-4.
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