SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector
B. S. Tao; P. Barate; J. Frougier; P. Renucci; B. Xu; A. Djeffal; H. Jaffrès; J.-M. George; X. Marie; S. Petit-Watelot; S. Mangin; X. F. Han; Z. G. Wang; Y. Lu
2017
Source PublicationAPPLIED PHYSICS LETTERS
Volume108Pages:152404
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28418
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
B. S. Tao,P. Barate,J. Frougier,et al. Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector[J]. APPLIED PHYSICS LETTERS,2017,108:152404.
APA B. S. Tao.,P. Barate.,J. Frougier.,P. Renucci.,B. Xu.,...&Y. Lu.(2017).Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector.APPLIED PHYSICS LETTERS,108,152404.
MLA B. S. Tao,et al."Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector".APPLIED PHYSICS LETTERS 108(2017):152404.
Files in This Item:
File Name/Size DocType Version Access License
electrical spin inje(1227KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[B. S. Tao]'s Articles
[P. Barate]'s Articles
[J. Frougier]'s Articles
Baidu academic
Similar articles in Baidu academic
[B. S. Tao]'s Articles
[P. Barate]'s Articles
[J. Frougier]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[B. S. Tao]'s Articles
[P. Barate]'s Articles
[J. Frougier]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.