SEMI OpenIR  > 中科院半导体照明研发中心
InGaN/GaN LED载流子泄漏的研究
黄洋
Subtype博士
Thesis Advisor王国宏
2018-05-17
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline微电子学与固体电子学
Date Available2018-05-29
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28389
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
黄洋. InGaN/GaN LED载流子泄漏的研究[D]. 北京. 中国科学院研究生院,2018.
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博士论文上交.pdf(3892KB) 限制开放LicenseApplication Full Text
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