SEMI OpenIR  > 中科院半导体材料科学重点实验室
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
Dingyu Ma; Xin Rong; Xiantong Zheng; Weiying Wang; Ping Wang; Tobias Schulz; Martin Albrecht; Sebastian Metzner; Mathias Müller; Olga August; Frank Bertram; Jürgen Christen; Peng Jin; Mo Li; Jian Zhang; Xuelin Yang; Fujun Xu; Zhixin Qin; Weikun Ge; Bo Shen; Xinqiang Wang
2017
Source PublicationScientific Reports
Volume7Pages:46420
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28323
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Dingyu Ma,Xin Rong,Xiantong Zheng,et al. Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy[J]. Scientific Reports,2017,7:46420.
APA Dingyu Ma.,Xin Rong.,Xiantong Zheng.,Weiying Wang.,Ping Wang.,...&Xinqiang Wang.(2017).Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy.Scientific Reports,7,46420.
MLA Dingyu Ma,et al."Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy".Scientific Reports 7(2017):46420.
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