SEMI OpenIR  > 中科院半导体材料科学重点实验室
Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition
Xianghai Ji; Xiaoguang Yang; Tao Yang
2017
Source PublicationNanoscale Research Letters
Volume12Pages:1-8
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28316
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xianghai Ji,Xiaoguang Yang,Tao Yang. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition[J]. Nanoscale Research Letters,2017,12:1-8.
APA Xianghai Ji,Xiaoguang Yang,&Tao Yang.(2017).Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition.Nanoscale Research Letters,12,1-8.
MLA Xianghai Ji,et al."Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition".Nanoscale Research Letters 12(2017):1-8.
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