SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electron mobility of inverted InAs/GaSb quantum well structure
Wenjun Huang; Wenquan Ma; Jianliang Huang; Yanhua Zhang; Yulian Cao; Chengcheng Zhao; Xiaolu Guo
2017
Source PublicationSolid State Communications
Volume267Pages:29-32
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28315
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wenjun Huang,Wenquan Ma,Jianliang Huang,et al. Electron mobility of inverted InAs/GaSb quantum well structure[J]. Solid State Communications,2017,267:29-32.
APA Wenjun Huang.,Wenquan Ma.,Jianliang Huang.,Yanhua Zhang.,Yulian Cao.,...&Xiaolu Guo.(2017).Electron mobility of inverted InAs/GaSb quantum well structure.Solid State Communications,267,29-32.
MLA Wenjun Huang,et al."Electron mobility of inverted InAs/GaSb quantum well structure".Solid State Communications 267(2017):29-32.
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