SEMI OpenIR  > 中科院半导体材料科学重点实验室
Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer
Fangzheng Li; Lianshan Wang; Guijuan Zhao; Yulin Meng; Huijie Li; Shaoyan Yang; Zhanguo Wang
2017
Source PublicationSuperlattices and Microstructures
Volume110Pages:324-329
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28312
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Fangzheng Li,Lianshan Wang,Guijuan Zhao,et al. Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer[J]. Superlattices and Microstructures,2017,110:324-329.
APA Fangzheng Li.,Lianshan Wang.,Guijuan Zhao.,Yulin Meng.,Huijie Li.,...&Zhanguo Wang.(2017).Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer.Superlattices and Microstructures,110,324-329.
MLA Fangzheng Li,et al."Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer".Superlattices and Microstructures 110(2017):324-329.
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