SEMI OpenIR  > 中科院半导体材料科学重点实验室
Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping
Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Zesheng Ji; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang
2017
Source PublicationSCIENTIFIC REPORTS
Volume7Pages:4497
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28311
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Guijuan Zhao,Huijie Li,Lianshan Wang,et al. Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping[J]. SCIENTIFIC REPORTS,2017,7:4497.
APA Guijuan Zhao.,Huijie Li.,Lianshan Wang.,Yulin Meng.,Zesheng Ji.,...&Zhanguo Wang.(2017).Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping.SCIENTIFIC REPORTS,7,4497.
MLA Guijuan Zhao,et al."Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping".SCIENTIFIC REPORTS 7(2017):4497.
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