| Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping | |
| Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Zesheng Ji; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang | |
| 2017 | |
| Source Publication | SCIENTIFIC REPORTS
 |
| Volume | 7Pages:4497 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2018-05-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28311 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Guijuan Zhao,Huijie Li,Lianshan Wang,et al. Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping[J]. SCIENTIFIC REPORTS,2017,7:4497. |
| APA | Guijuan Zhao.,Huijie Li.,Lianshan Wang.,Yulin Meng.,Zesheng Ji.,...&Zhanguo Wang.(2017).Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping.SCIENTIFIC REPORTS,7,4497. |
| MLA | Guijuan Zhao,et al."Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping".SCIENTIFIC REPORTS 7(2017):4497. |
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| Anisotropically biax（4061KB） | 限制开放 | License | Application Full Text | |||
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