| Enhancement of below gap transmission of InAs single crystal via suppression of native defects | |
| Guiying Shen; Youwen Zhao; Zhiyuan Dong; Jingming Liu; Hui Xie; Yongbiao Bai; Xiaoyu Chen | |
| 2017 | |
| Source Publication | Materials Research Express
 |
| Volume | 4Issue:3Pages:036203 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2018-05-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28308 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Guiying Shen,Youwen Zhao,Zhiyuan Dong,et al. Enhancement of below gap transmission of InAs single crystal via suppression of native defects[J]. Materials Research Express,2017,4(3):036203. |
| APA | Guiying Shen.,Youwen Zhao.,Zhiyuan Dong.,Jingming Liu.,Hui Xie.,...&Xiaoyu Chen.(2017).Enhancement of below gap transmission of InAs single crystal via suppression of native defects.Materials Research Express,4(3),036203. |
| MLA | Guiying Shen,et al."Enhancement of below gap transmission of InAs single crystal via suppression of native defects".Materials Research Express 4.3(2017):036203. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Enhancement of below（1090KB） | 限制开放 | License | Application Full Text | |||
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