SEMI OpenIR  > 中科院半导体材料科学重点实验室
Enhancement of below gap transmission of InAs single crystal via suppression of native defects
Guiying Shen; Youwen Zhao; Zhiyuan Dong; Jingming Liu; Hui Xie; Yongbiao Bai; Xiaoyu Chen
2017
Source PublicationMaterials Research Express
Volume4Issue:3Pages:036203
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28308
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Guiying Shen,Youwen Zhao,Zhiyuan Dong,et al. Enhancement of below gap transmission of InAs single crystal via suppression of native defects[J]. Materials Research Express,2017,4(3):036203.
APA Guiying Shen.,Youwen Zhao.,Zhiyuan Dong.,Jingming Liu.,Hui Xie.,...&Xiaoyu Chen.(2017).Enhancement of below gap transmission of InAs single crystal via suppression of native defects.Materials Research Express,4(3),036203.
MLA Guiying Shen,et al."Enhancement of below gap transmission of InAs single crystal via suppression of native defects".Materials Research Express 4.3(2017):036203.
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