Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer | |
Fangzheng Li; Lianshan Wang; Guijuan Zhao; Yulin Meng; Huijie Li; Shaoyan Yang; Zhanguo Wang | |
2017 | |
Source Publication | Superlattices and Microstructures
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Volume | 110Pages:324-329 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Date Available | 2018-05-23 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28301 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Fangzheng Li,Lianshan Wang,Guijuan Zhao,et al. Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer[J]. Superlattices and Microstructures,2017,110:324-329. |
APA | Fangzheng Li.,Lianshan Wang.,Guijuan Zhao.,Yulin Meng.,Huijie Li.,...&Zhanguo Wang.(2017).Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer.Superlattices and Microstructures,110,324-329. |
MLA | Fangzheng Li,et al."Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer".Superlattices and Microstructures 110(2017):324-329. |
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