| Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer | |
| Fangzheng Li; Lianshan Wang; Guijuan Zhao; Yulin Meng; Huijie Li; Shaoyan Yang; Zhanguo Wang | |
| 2017 | |
| Source Publication | Superlattices and Microstructures
 |
| Volume | 110Pages:324-329 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2018-05-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28301 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Fangzheng Li,Lianshan Wang,Guijuan Zhao,et al. Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer[J]. Superlattices and Microstructures,2017,110:324-329. |
| APA | Fangzheng Li.,Lianshan Wang.,Guijuan Zhao.,Yulin Meng.,Huijie Li.,...&Zhanguo Wang.(2017).Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer.Superlattices and Microstructures,110,324-329. |
| MLA | Fangzheng Li,et al."Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer".Superlattices and Microstructures 110(2017):324-329. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Performance enhancem（1695KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment