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Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation
X. L. Zeng; J. L. Yu; S. Y. Cheng; Y. F. Lai, Y. H. Chen; W. Huang
2017
Source PublicationJournal of Applied Physics
Volume121Pages:193901
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28299
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
X. L. Zeng,J. L. Yu,S. Y. Cheng,et al. Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation[J]. Journal of Applied Physics,2017,121:193901.
APA X. L. Zeng,J. L. Yu,S. Y. Cheng,Y. F. Lai, Y. H. Chen,&W. Huang.(2017).Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation.Journal of Applied Physics,121,193901.
MLA X. L. Zeng,et al."Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation".Journal of Applied Physics 121(2017):193901.
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