| Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect | |
| Caihong Jia; Xiaoqian Yin; Guang Yang; Yonghui Wu; Jiachen Li; Yonghai Chen; Weifeng Zhang | |
| 2017 | |
| Source Publication | Appl. Phys. Lett.
 |
| Volume | 111Pages:113506 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2018-05-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28295 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Caihong Jia,Xiaoqian Yin,Guang Yang,et al. Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect[J]. Appl. Phys. Lett.,2017,111:113506. |
| APA | Caihong Jia.,Xiaoqian Yin.,Guang Yang.,Yonghui Wu.,Jiachen Li.,...&Weifeng Zhang.(2017).Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect.Appl. Phys. Lett.,111,113506. |
| MLA | Caihong Jia,et al."Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect".Appl. Phys. Lett. 111(2017):113506. |
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| Epitaxial growth of （1256KB） | 限制开放 | License | Application Full Text | |||
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