SEMI OpenIR  > 中科院半导体材料科学重点实验室
Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect
Caihong Jia; Xiaoqian Yin; Guang Yang; Yonghui Wu; Jiachen Li; Yonghai Chen; Weifeng Zhang
2017
Source PublicationAppl. Phys. Lett.
Volume111Pages:113506
Subject Area半导体材料
Indexed BySCI
Date Available2018-05-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28295
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Caihong Jia,Xiaoqian Yin,Guang Yang,et al. Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect[J]. Appl. Phys. Lett.,2017,111:113506.
APA Caihong Jia.,Xiaoqian Yin.,Guang Yang.,Yonghui Wu.,Jiachen Li.,...&Weifeng Zhang.(2017).Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect.Appl. Phys. Lett.,111,113506.
MLA Caihong Jia,et al."Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect".Appl. Phys. Lett. 111(2017):113506.
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