SEMI OpenIR  > 半导体材料科学中心
基于SOI衬底InGaAs/InP多量子阱结构纳米线研究
李稚博
Subtype博士后
Thesis Advisor潘教青
2017-12
Degree Grantor中国科学院闱地
Place of Conferral北京
Degree Discipline电子科技与技术
Date Available2018-01-03
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28262
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
李稚博. 基于SOI衬底InGaAs/InP多量子阱结构纳米线研究[D]. 北京. 中国科学院闱地,2017.
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