| Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition | |
| Peng Ren; Gang Han; Bing-Lei Fu; Bin Xue; Ning Zhang; Zhe Liu; Li-Xia Zhao; Jun-Xi Wang; Jin-Min Li | |
| 2016 | |
| Source Publication | Chinese Physics Letters
 |
| Volume | 33Issue:6Pages:068101 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Date Available | 2017-03-16 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28116 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Peng Ren,Gang Han,Bing-Lei Fu,et al. Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition[J]. Chinese Physics Letters,2016,33(6):068101. |
| APA | Peng Ren.,Gang Han.,Bing-Lei Fu.,Bin Xue.,Ning Zhang.,...&Jin-Min Li.(2016).Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition.Chinese Physics Letters,33(6),068101. |
| MLA | Peng Ren,et al."Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition".Chinese Physics Letters 33.6(2016):068101. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Selective Area Growt（5049KB） | 限制开放 | License | Application Full Text | |||
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