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Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition
Peng Ren; Gang Han; Bing-Lei Fu; Bin Xue; Ning Zhang; Zhe Liu; Li-Xia Zhao; Jun-Xi Wang; Jin-Min Li
2016
Source PublicationChinese Physics Letters
Volume33Issue:6Pages:068101
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28116
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Peng Ren,Gang Han,Bing-Lei Fu,et al. Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition[J]. Chinese Physics Letters,2016,33(6):068101.
APA Peng Ren.,Gang Han.,Bing-Lei Fu.,Bin Xue.,Ning Zhang.,...&Jin-Min Li.(2016).Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition.Chinese Physics Letters,33(6),068101.
MLA Peng Ren,et al."Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition".Chinese Physics Letters 33.6(2016):068101.
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