SEMI OpenIR  > 中科院半导体照明研发中心
Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
Zhiqiang Liu; Xiaoyan Yi; Zhiguo Yu; Gongdong Yuan; Yang Liu; Junxi Wang; Jinmin Li; Na Lu; Ian Ferguson; Yong Zhang
2016
Source PublicationScientific Reports
Volume6Pages:19537
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28111
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhiqiang Liu,Xiaoyan Yi,Zhiguo Yu,et al. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides[J]. Scientific Reports,2016,6:19537.
APA Zhiqiang Liu.,Xiaoyan Yi.,Zhiguo Yu.,Gongdong Yuan.,Yang Liu.,...&Yong Zhang.(2016).Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.Scientific Reports,6,19537.
MLA Zhiqiang Liu,et al."Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides".Scientific Reports 6(2016):19537.
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