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High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition
Shuo Zhang; Ping Ma; Boting Liu; Dongxue Wu; Yuliang Huang; Junxi Wang; Jinmin Li
2016
Source PublicationAIP Advances
Volume6Issue:6Pages:065301
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28108
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Shuo Zhang,Ping Ma,Boting Liu,et al. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition[J]. AIP Advances,2016,6(6):065301.
APA Shuo Zhang.,Ping Ma.,Boting Liu.,Dongxue Wu.,Yuliang Huang.,...&Jinmin Li.(2016).High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition.AIP Advances,6(6),065301.
MLA Shuo Zhang,et al."High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition".AIP Advances 6.6(2016):065301.
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