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GaN nanowire arrays by a patterned metal-assisted chemical etching
K.C. Wang; G.D.Yuan n; R.W.Wu; H.X.Lu; Z.Q.Liu; T.B.Wei; J.X.Wang; J.M.Li; W.J.Zhang
2016
Source PublicationJournal of Crystal Growth
Volume440Pages:96-101
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28107
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
K.C. Wang,G.D.Yuan n,R.W.Wu,et al. GaN nanowire arrays by a patterned metal-assisted chemical etching[J]. Journal of Crystal Growth,2016,440:96-101.
APA K.C. Wang.,G.D.Yuan n.,R.W.Wu.,H.X.Lu.,Z.Q.Liu.,...&W.J.Zhang.(2016).GaN nanowire arrays by a patterned metal-assisted chemical etching.Journal of Crystal Growth,440,96-101.
MLA K.C. Wang,et al."GaN nanowire arrays by a patterned metal-assisted chemical etching".Journal of Crystal Growth 440(2016):96-101.
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