| Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes | |
| Ning Zhang; Xue-Cheng Wei; Kun-Yi Lu; Liang-Sen Feng; Jie Yang; Bin Xue; Zhe Liu; Jin-Min Li and Jun-Xi Wang | |
| 2016 | |
| Source Publication | Chinese Physics Letters
 |
| Volume | 33Issue:11Pages:117302 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Date Available | 2017-03-16 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28099 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Ning Zhang,Xue-Cheng Wei,Kun-Yi Lu,et al. Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes[J]. Chinese Physics Letters,2016,33(11):117302. |
| APA | Ning Zhang.,Xue-Cheng Wei.,Kun-Yi Lu.,Liang-Sen Feng.,Jie Yang.,...&Jin-Min Li and Jun-Xi Wang.(2016).Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes.Chinese Physics Letters,33(11),117302. |
| MLA | Ning Zhang,et al."Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes".Chinese Physics Letters 33.11(2016):117302. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Effect of Back Diffu（281KB） | 限制开放 | License | Application Full Text | |||
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