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Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes
Ning Zhang; Xue-Cheng Wei; Kun-Yi Lu; Liang-Sen Feng; Jie Yang; Bin Xue; Zhe Liu; Jin-Min Li and Jun-Xi Wang
2016
Source PublicationChinese Physics Letters
Volume33Issue:11Pages:117302
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28099
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Ning Zhang,Xue-Cheng Wei,Kun-Yi Lu,et al. Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes[J]. Chinese Physics Letters,2016,33(11):117302.
APA Ning Zhang.,Xue-Cheng Wei.,Kun-Yi Lu.,Liang-Sen Feng.,Jie Yang.,...&Jin-Min Li and Jun-Xi Wang.(2016).Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes.Chinese Physics Letters,33(11),117302.
MLA Ning Zhang,et al."Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes".Chinese Physics Letters 33.11(2016):117302.
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