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Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band
Yang Huang; Zhiqiang Liu; Xiaoyan Yi; Yao Guo; Guodong Yuan; JunXi Wang; Guohong Wang; Jinmin Li
2016
Source PublicationIEEE Photonics Journal
Volume8Issue:5Pages:8200107
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28087
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Yang Huang,Zhiqiang Liu,Xiaoyan Yi,et al. Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band[J]. IEEE Photonics Journal,2016,8(5):8200107.
APA Yang Huang.,Zhiqiang Liu.,Xiaoyan Yi.,Yao Guo.,Guodong Yuan.,...&Jinmin Li.(2016).Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band.IEEE Photonics Journal,8(5),8200107.
MLA Yang Huang,et al."Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band".IEEE Photonics Journal 8.5(2016):8200107.
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