| Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes | |
| Yang Huang; Zhiqiang Liu; Xiaoyan Yi; Yao Guo; Shaoteng Wu; Guodong Yuan; Junxi Wang; Guohong Wang; Jinmin Li | |
| 2016 | |
| Source Publication | Modern Physics Letters B
 |
| Volume | 20Pages:1650221 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Date Available | 2017-03-16 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28083 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Yang Huang,Zhiqiang Liu,Xiaoyan Yi,et al. Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes[J]. Modern Physics Letters B,2016,20:1650221. |
| APA | Yang Huang.,Zhiqiang Liu.,Xiaoyan Yi.,Yao Guo.,Shaoteng Wu.,...&Jinmin Li.(2016).Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes.Modern Physics Letters B,20,1650221. |
| MLA | Yang Huang,et al."Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes".Modern Physics Letters B 20(2016):1650221. |
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| File Name/Size | DocType | Version | Access | License | ||
| Carrier leakage effe（2663KB） | 限制开放 | License | Application Full Text | |||
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