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Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes
Yang Huang; Zhiqiang Liu; Xiaoyan Yi; Yao Guo; Shaoteng Wu; Guodong Yuan; Junxi Wang; Guohong Wang; Jinmin Li
2016
Source PublicationModern Physics Letters B
Volume20Pages:1650221
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28083
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Yang Huang,Zhiqiang Liu,Xiaoyan Yi,et al. Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes[J]. Modern Physics Letters B,2016,20:1650221.
APA Yang Huang.,Zhiqiang Liu.,Xiaoyan Yi.,Yao Guo.,Shaoteng Wu.,...&Jinmin Li.(2016).Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes.Modern Physics Letters B,20,1650221.
MLA Yang Huang,et al."Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes".Modern Physics Letters B 20(2016):1650221.
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