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Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion
Junjie Kang; Vinh Quang Dang; Hongjian Li; Sungjin Moon; Panpan Li; Yangdoo Kim; Chaehyun Kim; Jinyoung Choi; Hakjong Choi; Zhiqiang Liu; Heon Lee
2016
Source PublicationNanotechnology
Volume28Issue:4Pages:045401
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28082
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Junjie Kang,Vinh Quang Dang,Hongjian Li,et al. Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion[J]. Nanotechnology,2016,28(4):045401.
APA Junjie Kang.,Vinh Quang Dang.,Hongjian Li.,Sungjin Moon.,Panpan Li.,...&Heon Lee.(2016).Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion.Nanotechnology,28(4),045401.
MLA Junjie Kang,et al."Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion".Nanotechnology 28.4(2016):045401.
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