Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion | |
Junjie Kang; Vinh Quang Dang; Hongjian Li; Sungjin Moon; Panpan Li; Yangdoo Kim; Chaehyun Kim; Jinyoung Choi; Hakjong Choi; Zhiqiang Liu; Heon Lee | |
2016 | |
Source Publication | Nanotechnology
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Volume | 28Issue:4Pages:045401 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Date Available | 2017-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28082 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Junjie Kang,Vinh Quang Dang,Hongjian Li,et al. Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion[J]. Nanotechnology,2016,28(4):045401. |
APA | Junjie Kang.,Vinh Quang Dang.,Hongjian Li.,Sungjin Moon.,Panpan Li.,...&Heon Lee.(2016).Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion.Nanotechnology,28(4),045401. |
MLA | Junjie Kang,et al."Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion".Nanotechnology 28.4(2016):045401. |
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