Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission | |
Xiang Chen; Jianchang Yan; Yun Zhang; Yingdong Tian; Yanan Guo; Shuo Zhang; Tongbo Wei; Junxi Wang; Jin Min Li | |
2016 | |
Source Publication | IEEE Photonics Journal
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Volume | 8Issue:5Pages:2300211 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Date Available | 2017-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28081 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Xiang Chen,Jianchang Yan,Yun Zhang,et al. Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission[J]. IEEE Photonics Journal,2016,8(5):2300211. |
APA | Xiang Chen.,Jianchang Yan.,Yun Zhang.,Yingdong Tian.,Yanan Guo.,...&Jin Min Li.(2016).Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission.IEEE Photonics Journal,8(5),2300211. |
MLA | Xiang Chen,et al."Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission".IEEE Photonics Journal 8.5(2016):2300211. |
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