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Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission
Xiang Chen; Jianchang Yan; Yun Zhang; Yingdong Tian; Yanan Guo; Shuo Zhang; Tongbo Wei; Junxi Wang; Jin Min Li
2016
Source PublicationIEEE Photonics Journal
Volume8Issue:5Pages:2300211
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28081
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Xiang Chen,Jianchang Yan,Yun Zhang,et al. Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission[J]. IEEE Photonics Journal,2016,8(5):2300211.
APA Xiang Chen.,Jianchang Yan.,Yun Zhang.,Yingdong Tian.,Yanan Guo.,...&Jin Min Li.(2016).Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission.IEEE Photonics Journal,8(5),2300211.
MLA Xiang Chen,et al."Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission".IEEE Photonics Journal 8.5(2016):2300211.
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