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GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy
Jun Zheng; Suyuan Wang; Zhi Liu; Hui Cong; Chunlai Xue; Chuanbo Li; Yuhua Zuo; Buwen Cheng; Qiming Wang
2016
Source PublicationApplied Physics Letters
Volume108Issue:3Pages:033503
Subject Area光电子学
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28061
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Jun Zheng,Suyuan Wang,Zhi Liu,et al. GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy[J]. Applied Physics Letters,2016,108(3):033503.
APA Jun Zheng.,Suyuan Wang.,Zhi Liu.,Hui Cong.,Chunlai Xue.,...&Qiming Wang.(2016).GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy.Applied Physics Letters,108(3),033503.
MLA Jun Zheng,et al."GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy".Applied Physics Letters 108.3(2016):033503.
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