SEMI OpenIR  > 半导体超晶格国家重点实验室
Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells
Bing-Hui Niu; Teng-Fei Yan; Hai-Qiao Ni; Zhi-Chuan Niu; Xin-Hui Zhang
2016
Source PublicationChinese Physics Letters
Volume33Issue:10Pages:107802
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28060
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Bing-Hui Niu,Teng-Fei Yan,Hai-Qiao Ni,et al. Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells[J]. Chinese Physics Letters,2016,33(10):107802.
APA Bing-Hui Niu,Teng-Fei Yan,Hai-Qiao Ni,Zhi-Chuan Niu,&Xin-Hui Zhang.(2016).Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells.Chinese Physics Letters,33(10),107802.
MLA Bing-Hui Niu,et al."Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells".Chinese Physics Letters 33.10(2016):107802.
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