SEMI OpenIR  > 半导体超晶格国家重点实验室
Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well
Junbin Li; Xiaoguang Wu; Guowei Wang; Yingqiang Xu; Zhichuan Niu; Xinhui Zhang
2016
Source PublicationJournal of Physics D: Applied Physics
Volume49Issue:14Pages:145303
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28059
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Junbin Li,Xiaoguang Wu,Guowei Wang,et al. Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well[J]. Journal of Physics D: Applied Physics,2016,49(14):145303.
APA Junbin Li,Xiaoguang Wu,Guowei Wang,Yingqiang Xu,Zhichuan Niu,&Xinhui Zhang.(2016).Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well.Journal of Physics D: Applied Physics,49(14),145303.
MLA Junbin Li,et al."Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well".Journal of Physics D: Applied Physics 49.14(2016):145303.
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