Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well

	Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well
	Junbin Li; Xiaoguang Wu; Guowei Wang; Yingqiang Xu; Zhichuan Niu; Xinhui Zhang
	2016
Source Publication	Journal of Physics D: Applied Physics
Volume	49 Pages:145303
Subject Area	半导体物理
Indexed By	SCI
Date Available	2017-03-16
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28058
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Junbin Li,Xiaoguang Wu,Guowei Wang,et al. Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well[J]. Journal of Physics D: Applied Physics,2016,49:145303.
APA	Junbin Li,Xiaoguang Wu,Guowei Wang,Yingqiang Xu,Zhichuan Niu,&Xinhui Zhang.(2016).Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well.Journal of Physics D: Applied Physics,49,145303.
MLA	Junbin Li,et al."Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well".Journal of Physics D: Applied Physics 49(2016):145303.

Files in This Item:
File Name/Size	DocType	Version	Access	License

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库