Knowledge Management System Of Institute of Semiconductors,CAS
Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well | |
Junbin Li; Xiaoguang Wu; Guowei Wang; Yingqiang Xu; Zhichuan Niu; Xinhui Zhang | |
2016 | |
Source Publication | Journal of Physics D: Applied Physics
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Volume | 49Pages:145303 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2017-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28058 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Junbin Li,Xiaoguang Wu,Guowei Wang,et al. Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well[J]. Journal of Physics D: Applied Physics,2016,49:145303. |
APA | Junbin Li,Xiaoguang Wu,Guowei Wang,Yingqiang Xu,Zhichuan Niu,&Xinhui Zhang.(2016).Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well.Journal of Physics D: Applied Physics,49,145303. |
MLA | Junbin Li,et al."Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well".Journal of Physics D: Applied Physics 49(2016):145303. |
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