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Large lateral photovoltaic effect in μc-SiOx:H/a-Si:H/c-Si p–i–n structure
Shuang Qiao; Jianhui Chen; Jihong Liu; Xinhui Zhang; Shufang Wang; Guangsheng Fu
2016
Source PublicationApplied Physics Express
Volume9Pages:031301
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28056
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Shuang Qiao,Jianhui Chen,Jihong Liu,等. Large lateral photovoltaic effect in μc-SiOx:H/a-Si:H/c-Si p–i–n structure[J]. Applied Physics Express,2016,9:031301.
APA Shuang Qiao,Jianhui Chen,Jihong Liu,Xinhui Zhang,Shufang Wang,&Guangsheng Fu.(2016).Large lateral photovoltaic effect in μc-SiOx:H/a-Si:H/c-Si p–i–n structure.Applied Physics Express,9,031301.
MLA Shuang Qiao,et al."Large lateral photovoltaic effect in μc-SiOx:H/a-Si:H/c-Si p–i–n structure".Applied Physics Express 9(2016):031301.
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