SEMI OpenIR  > 半导体超晶格国家重点实验室
Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well
J. B. Li; X. G. Wu; G. W. Wang; Y. Q. Xu; Z. C. Niu; X. H. Zhang
2016
Source PublicationScientific Reports
Volume6Pages:31189
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28055
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
J. B. Li,X. G. Wu,G. W. Wang,et al. Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well[J]. Scientific Reports,2016,6:31189.
APA J. B. Li,X. G. Wu,G. W. Wang,Y. Q. Xu,Z. C. Niu,&X. H. Zhang.(2016).Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well.Scientific Reports,6,31189.
MLA J. B. Li,et al."Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well".Scientific Reports 6(2016):31189.
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