CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission

	CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission
	Ke-Zhao Du; Xingzhi Wang; Jun Zhang; Xinfeng Liu; Christian Kloc; Qihua Xiong
	2016
Source Publication	Optical Engineering
Volume	56 Issue:1 Pages:011109
Subject Area	半导体物理
Indexed By	SCI
Date Available	2017-03-16
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28049
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Ke-Zhao Du,Xingzhi Wang,Jun Zhang,et al. CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission[J]. Optical Engineering,2016,56(1):011109.
APA	Ke-Zhao Du,Xingzhi Wang,Jun Zhang,Xinfeng Liu,Christian Kloc,&Qihua Xiong.(2016).CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission.Optical Engineering,56(1),011109.
MLA	Ke-Zhao Du,et al."CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission".Optical Engineering 56.1(2016):011109.

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