Knowledge Management System Of Institute of Semiconductors,CAS
CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission | |
Ke-Zhao Du; Xingzhi Wang; Jun Zhang; Xinfeng Liu; Christian Kloc; Qihua Xiong | |
2016 | |
Source Publication | Optical Engineering
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Volume | 56Issue:1Pages:011109 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2017-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28049 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Ke-Zhao Du,Xingzhi Wang,Jun Zhang,et al. CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission[J]. Optical Engineering,2016,56(1):011109. |
APA | Ke-Zhao Du,Xingzhi Wang,Jun Zhang,Xinfeng Liu,Christian Kloc,&Qihua Xiong.(2016).CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission.Optical Engineering,56(1),011109. |
MLA | Ke-Zhao Du,et al."CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission".Optical Engineering 56.1(2016):011109. |
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File Name/Size | DocType | Version | Access | License | ||
CdS bulk crystal gro(1155KB) | 限制开放 | License | Application Full Text |
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