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Charge trap memory based on few-layer black phosphorus
Qi Feng; Faguang Yan; Wengang Luo; Kaiyou Wang
2016
Source PublicationNanoscale
Volume8Issue:5Pages:2686-2692
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28039
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Qi Feng,Faguang Yan,Wengang Luo,et al. Charge trap memory based on few-layer black phosphorus[J]. Nanoscale,2016,8(5):2686-2692.
APA Qi Feng,Faguang Yan,Wengang Luo,&Kaiyou Wang.(2016).Charge trap memory based on few-layer black phosphorus.Nanoscale,8(5),2686-2692.
MLA Qi Feng,et al."Charge trap memory based on few-layer black phosphorus".Nanoscale 8.5(2016):2686-2692.
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