SEMI OpenIR  > 半导体超晶格国家重点实验室
Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy
Xin Rong; Xinqiang Wang; Guang Chen; Jianhai Pan; Ping Wang; Huapeng Liu; Fujun Xu; Pingheng Tan; Bo Shen
2016
Source PublicationSuperlattices and Microstructures
Volume93Pages:27-31
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28030
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xin Rong,Xinqiang Wang,Guang Chen,et al. Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy[J]. Superlattices and Microstructures,2016,93:27-31.
APA Xin Rong.,Xinqiang Wang.,Guang Chen.,Jianhai Pan.,Ping Wang.,...&Bo Shen.(2016).Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy.Superlattices and Microstructures,93,27-31.
MLA Xin Rong,et al."Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy".Superlattices and Microstructures 93(2016):27-31.
Files in This Item:
File Name/Size DocType Version Access License
Residual stress in A(859KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Xin Rong]'s Articles
[Xinqiang Wang]'s Articles
[Guang Chen]'s Articles
Baidu academic
Similar articles in Baidu academic
[Xin Rong]'s Articles
[Xinqiang Wang]'s Articles
[Guang Chen]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Xin Rong]'s Articles
[Xinqiang Wang]'s Articles
[Guang Chen]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.