SEMI OpenIR  > 半导体超晶格国家重点实验室
Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate
Xiao-Li Li; Xiao-Fen Qiao; Wen-Peng Han; Xin Zhang; Qing-Hai Tan; Tao Chen; Ping-Heng Tan
2016
Source PublicationCondensed Matter
Volume27Issue:14Pages:145704
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28026
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiao-Li Li,Xiao-Fen Qiao,Wen-Peng Han,et al. Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate[J]. Condensed Matter,2016,27(14):145704.
APA Xiao-Li Li.,Xiao-Fen Qiao.,Wen-Peng Han.,Xin Zhang.,Qing-Hai Tan.,...&Ping-Heng Tan.(2016).Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate.Condensed Matter,27(14),145704.
MLA Xiao-Li Li,et al."Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate".Condensed Matter 27.14(2016):145704.
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