Knowledge Management System Of Institute of Semiconductors,CAS
Pressure-induced K–Λ crossing in monolayer WSe2† | |
Yanxia Ye; Xiuming Dou; Kun Ding; Desheng Jiang; Fuhua Yang; Baoquan Sun | |
2016 | |
Source Publication | Nanoscale
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Volume | 8Pages:10843–10848 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2017-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28020 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Yanxia Ye,Xiuming Dou,Kun Ding,等. Pressure-induced K–Λ crossing in monolayer WSe2†[J]. Nanoscale,2016,8:10843–10848. |
APA | Yanxia Ye,Xiuming Dou,Kun Ding,Desheng Jiang,Fuhua Yang,&Baoquan Sun.(2016).Pressure-induced K–Λ crossing in monolayer WSe2†.Nanoscale,8,10843–10848. |
MLA | Yanxia Ye,et al."Pressure-induced K–Λ crossing in monolayer WSe2†".Nanoscale 8(2016):10843–10848. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Nanoscale Pressure-i(1760KB) | 限制开放 | License | Application Full Text |
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