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Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures | |
Kenan Zhang; Tianning Zhang; Guanghui Cheng; Tianxin Li; Shuxia Wang; Wei Wei; Xiaohao Zhou; Weiwei Yu; Yan Sun; Peng Wang; Dong Zhang; Changgan Zeng; Xingjun Wang; Weida Hu; Hong Jin Fan; Guozhen Shen; Xin Chen; Xiangfeng Duan; Kai Chang; Ning Dai | |
2016 | |
Source Publication | ACS Nano.
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Volume | 10Issue:3Pages:3852-3858 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2017-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28006 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Kenan Zhang,Tianning Zhang,Guanghui Cheng,et al. Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures[J]. ACS Nano.,2016,10(3):3852-3858. |
APA | Kenan Zhang.,Tianning Zhang.,Guanghui Cheng.,Tianxin Li.,Shuxia Wang.,...&Ning Dai.(2016).Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures.ACS Nano.,10(3),3852-3858. |
MLA | Kenan Zhang,et al."Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures".ACS Nano. 10.3(2016):3852-3858. |
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Interlayer transitio(5749KB) | 限制开放 | License | Application Full Text |
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