SEMI OpenIR  > 半导体超晶格国家重点实验室
InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate
Wei Xiang; Guowei Wang; Hongyue Hao; Yongping Liao; Xi Han; Lichun Zhang; Yingqiang Xu; Zhengwei Ren; Haiqiao Ni; Zhenhong He; Zhichuan Niu
2016
Source PublicationJournal of Crystal Growth
Volume443Pages:85-89
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27999
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wei Xiang,Guowei Wang,Hongyue Hao,et al. InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate[J]. Journal of Crystal Growth,2016,443:85-89.
APA Wei Xiang.,Guowei Wang.,Hongyue Hao.,Yongping Liao.,Xi Han.,...&Zhichuan Niu.(2016).InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate.Journal of Crystal Growth,443,85-89.
MLA Wei Xiang,et al."InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate".Journal of Crystal Growth 443(2016):85-89.
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