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GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence
Xiren Chen; Junliang Xing; Liangqing Zhu; F.-X. Zha; Zhichuan Niu; Shaoling Guo; Jun Shao
2016
Source PublicationJournal of Applied Physics
Volume119Issue:17Pages:175301
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27998
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiren Chen,Junliang Xing,Liangqing Zhu,et al. GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence[J]. Journal of Applied Physics,2016,119(17):175301.
APA Xiren Chen.,Junliang Xing.,Liangqing Zhu.,F.-X. Zha.,Zhichuan Niu.,...&Jun Shao.(2016).GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence.Journal of Applied Physics,119(17),175301.
MLA Xiren Chen,et al."GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence".Journal of Applied Physics 119.17(2016):175301.
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