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Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer
Xiang Li; Hong Wang; Zhongliang Qiao; Yu Zhang; Zhichuan Niu; Cunzhu Tong; Chongyang Liu
2016
Source PublicationIEEE Journal of Selected Topics in Quantum Electronics
Volume22Issue:6
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27996
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiang Li,Hong Wang,Zhongliang Qiao,et al. Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer[J]. IEEE Journal of Selected Topics in Quantum Electronics,2016,22(6).
APA Xiang Li.,Hong Wang.,Zhongliang Qiao.,Yu Zhang.,Zhichuan Niu.,...&Chongyang Liu.(2016).Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer.IEEE Journal of Selected Topics in Quantum Electronics,22(6).
MLA Xiang Li,et al."Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer".IEEE Journal of Selected Topics in Quantum Electronics 22.6(2016).
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