SEMI OpenIR  > 半导体超晶格国家重点实验室
Origin of the Distinct Diffusion Behaviors of Cu and Ag in Covalent and Ionic Semiconductors
Hui-Xiong Deng; Jun-Wei Luo; Shu-Shen Li; Su-Huai Wei
2016
Source PublicationPhysical Review Letters
Volume117Issue:16Pages:165901
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27987
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Hui-Xiong Deng,Jun-Wei Luo,Shu-Shen Li,et al. Origin of the Distinct Diffusion Behaviors of Cu and Ag in Covalent and Ionic Semiconductors[J]. Physical Review Letters,2016,117(16):165901.
APA Hui-Xiong Deng,Jun-Wei Luo,Shu-Shen Li,&Su-Huai Wei.(2016).Origin of the Distinct Diffusion Behaviors of Cu and Ag in Covalent and Ionic Semiconductors.Physical Review Letters,117(16),165901.
MLA Hui-Xiong Deng,et al."Origin of the Distinct Diffusion Behaviors of Cu and Ag in Covalent and Ionic Semiconductors".Physical Review Letters 117.16(2016):165901.
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