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Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te).
Le Huang; Fugen Wu; Jingbo Li
2016
Source PublicationTHE JOURNAL OF CHEMICAL PHYSICS
Volume144Issue:11Pages:114708
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27984
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Le Huang,Fugen Wu,Jingbo Li. Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te).[J]. THE JOURNAL OF CHEMICAL PHYSICS,2016,144(11):114708.
APA Le Huang,Fugen Wu,&Jingbo Li.(2016).Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)..THE JOURNAL OF CHEMICAL PHYSICS,144(11),114708.
MLA Le Huang,et al."Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te).".THE JOURNAL OF CHEMICAL PHYSICS 144.11(2016):114708.
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