Knowledge Management System Of Institute of Semiconductors,CAS
Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te). | |
Le Huang; Fugen Wu; Jingbo Li | |
2016 | |
Source Publication | THE JOURNAL OF CHEMICAL PHYSICS
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Volume | 144Issue:11Pages:114708 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2017-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27984 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Le Huang,Fugen Wu,Jingbo Li. Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te).[J]. THE JOURNAL OF CHEMICAL PHYSICS,2016,144(11):114708. |
APA | Le Huang,Fugen Wu,&Jingbo Li.(2016).Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)..THE JOURNAL OF CHEMICAL PHYSICS,144(11),114708. |
MLA | Le Huang,et al."Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te).".THE JOURNAL OF CHEMICAL PHYSICS 144.11(2016):114708. |
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