Fabrication of iridium oxide neural electrodes at the wafer level | |
ZHANG He; PEI WeiHua; ZHAO ShanShan; YANG XiaoWei; LIU RuiCong; LIU YuanYuan; WU Xian; GUO DongMei; GUI Qiang; GUO XuHong; XING Xiao; WANG YiJun; CHEN HongDa | |
2016 | |
Source Publication | Science China Technological Sciences
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Volume | 59Issue:9Pages:1399-1406 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2017-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27977 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | ZHANG He,PEI WeiHua,ZHAO ShanShan,et al. Fabrication of iridium oxide neural electrodes at the wafer level[J]. Science China Technological Sciences,2016,59(9):1399-1406. |
APA | ZHANG He.,PEI WeiHua.,ZHAO ShanShan.,YANG XiaoWei.,LIU RuiCong.,...&CHEN HongDa.(2016).Fabrication of iridium oxide neural electrodes at the wafer level.Science China Technological Sciences,59(9),1399-1406. |
MLA | ZHANG He,et al."Fabrication of iridium oxide neural electrodes at the wafer level".Science China Technological Sciences 59.9(2016):1399-1406. |
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Fabrication of iridi(1239KB) | 限制开放 | License | Application Full Text |
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