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Fabrication of iridium oxide neural electrodes at the wafer level
ZHANG He; PEI WeiHua; ZHAO ShanShan; YANG XiaoWei; LIU RuiCong; LIU YuanYuan; WU Xian; GUO DongMei; GUI Qiang; GUO XuHong; XING Xiao; WANG YiJun; CHEN HongDa
2016
Source PublicationScience China Technological Sciences
Volume59Issue:9Pages:1399-1406
Subject Area光电子学
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27977
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
ZHANG He,PEI WeiHua,ZHAO ShanShan,et al. Fabrication of iridium oxide neural electrodes at the wafer level[J]. Science China Technological Sciences,2016,59(9):1399-1406.
APA ZHANG He.,PEI WeiHua.,ZHAO ShanShan.,YANG XiaoWei.,LIU RuiCong.,...&CHEN HongDa.(2016).Fabrication of iridium oxide neural electrodes at the wafer level.Science China Technological Sciences,59(9),1399-1406.
MLA ZHANG He,et al."Fabrication of iridium oxide neural electrodes at the wafer level".Science China Technological Sciences 59.9(2016):1399-1406.
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