| Fabrication of iridium oxide neural electrodes at the wafer level | |
| ZHANG He; PEI WeiHua; ZHAO ShanShan; YANG XiaoWei; LIU RuiCong; LIU YuanYuan; WU Xian; GUO DongMei; GUI Qiang; GUO XuHong; XING Xiao; WANG YiJun; CHEN HongDa | |
| 2016 | |
| Source Publication | Science China Technological Sciences
 |
| Volume | 59Issue:9Pages:1399-1406 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2017-03-16 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27977 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | ZHANG He,PEI WeiHua,ZHAO ShanShan,et al. Fabrication of iridium oxide neural electrodes at the wafer level[J]. Science China Technological Sciences,2016,59(9):1399-1406. |
| APA | ZHANG He.,PEI WeiHua.,ZHAO ShanShan.,YANG XiaoWei.,LIU RuiCong.,...&CHEN HongDa.(2016).Fabrication of iridium oxide neural electrodes at the wafer level.Science China Technological Sciences,59(9),1399-1406. |
| MLA | ZHANG He,et al."Fabrication of iridium oxide neural electrodes at the wafer level".Science China Technological Sciences 59.9(2016):1399-1406. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Fabrication of iridi（1239KB） | 限制开放 | License | Application Full Text | |||
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