SEMI OpenIR  > 半导体超晶格国家重点实验室
Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy
Xuezhe Yu; Lixia Li; Hailong Wang; Jiaxing Xiao; Chao Shen; Dong Pan; Jianhua Zhao
2016
Source PublicationNanoscale
Volume8Pages:10615–10621
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27939
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xuezhe Yu,Lixia Li,Hailong Wang,et al. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy[J]. Nanoscale,2016,8:10615–10621.
APA Xuezhe Yu.,Lixia Li.,Hailong Wang.,Jiaxing Xiao.,Chao Shen.,...&Jianhua Zhao.(2016).Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.Nanoscale,8,10615–10621.
MLA Xuezhe Yu,et al."Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy".Nanoscale 8(2016):10615–10621.
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