SEMI OpenIR  > 半导体超晶格国家重点实验室
Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
Boyong Feng; Shaoyun Huang; Jiyin Wang; Dong Pan; Jianghua Zhao; H. Q. Xu
2016
Source PublicationJournal of Applied Physics
Volume119Issue:5Pages:054304
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27937
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Boyong Feng,Shaoyun Huang,Jiyin Wang,et al. Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts[J]. Journal of Applied Physics,2016,119(5):054304.
APA Boyong Feng,Shaoyun Huang,Jiyin Wang,Dong Pan,Jianghua Zhao,&H. Q. Xu.(2016).Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts.Journal of Applied Physics,119(5),054304.
MLA Boyong Feng,et al."Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts".Journal of Applied Physics 119.5(2016):054304.
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