SEMI OpenIR  > 半导体超晶格国家重点实验室
Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2p–n heterojunctions
Xiaoting Wang; Le Huang; Yuting Peng; Nengjie Huo; Kedi Wu; Congxin Xia; Zhongming Wei; Sefaattin Tongay; Jingbo Li
2016
Source PublicationNano Research
Volume9Issue:2Pages:507-516
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27919
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiaoting Wang,Le Huang,Yuting Peng,等. Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2p–n heterojunctions[J]. Nano Research,2016,9(2):507-516.
APA Xiaoting Wang.,Le Huang.,Yuting Peng.,Nengjie Huo.,Kedi Wu.,...&Jingbo Li.(2016).Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2p–n heterojunctions.Nano Research,9(2),507-516.
MLA Xiaoting Wang,et al."Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2p–n heterojunctions".Nano Research 9.2(2016):507-516.
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