Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice | |
Hai-Long Yu; Hao-Yue Wu; Hai-Jun Zhu; Guo-Feng Song; Yun Xu | |
2016 | |
Source Publication | Chinese Physics Letters
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Volume | 33Issue:12Pages:128103 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Date Available | 2017-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27913 |
Collection | 纳米光电子实验室 |
Recommended Citation GB/T 7714 | Hai-Long Yu,Hao-Yue Wu,Hai-Jun Zhu,et al. Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice[J]. Chinese Physics Letters,2016,33(12):128103. |
APA | Hai-Long Yu,Hao-Yue Wu,Hai-Jun Zhu,Guo-Feng Song,&Yun Xu.(2016).Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice.Chinese Physics Letters,33(12),128103. |
MLA | Hai-Long Yu,et al."Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice".Chinese Physics Letters 33.12(2016):128103. |
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Molecular Beam Epita(479KB) | 限制开放 | License | Application Full Text |
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