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Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
Hai-Long Yu; Hao-Yue Wu; Hai-Jun Zhu; Guo-Feng Song; Yun Xu
2016
Source PublicationChin. Phys. Lett.
Volume34Issue:1Pages:018101
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27912
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
Hai-Long Yu,Hao-Yue Wu,Hai-Jun Zhu,et al. Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers[J]. Chin. Phys. Lett.,2016,34(1):018101.
APA Hai-Long Yu,Hao-Yue Wu,Hai-Jun Zhu,Guo-Feng Song,&Yun Xu.(2016).Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers.Chin. Phys. Lett.,34(1),018101.
MLA Hai-Long Yu,et al."Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers".Chin. Phys. Lett. 34.1(2016):018101.
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