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XPS study of impurities in Si-doped AlN film
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
2016
Source PublicationSurface and Interface Analysis
Volume48Issue:12Pages:1305–1309
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27879
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
F. Liang,P. Chen,D. G. Zhao,et al. XPS study of impurities in Si-doped AlN film[J]. Surface and Interface Analysis,2016,48(12):1305–1309.
APA F. Liang.,P. Chen.,D. G. Zhao.,D. S. Jiang.,Z. J. Zhao.,...&G. T. Du.(2016).XPS study of impurities in Si-doped AlN film.Surface and Interface Analysis,48(12),1305–1309.
MLA F. Liang,et al."XPS study of impurities in Si-doped AlN film".Surface and Interface Analysis 48.12(2016):1305–1309.
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