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Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
2016
Source PublicationSuperlattices and Microstructures
Volume96Pages:220-225
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27877
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Wei Liu,Degang Zhao,Desheng Jiang,et al. Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes[J]. Superlattices and Microstructures,2016,96:220-225.
APA Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Zongshun Liu.,...&Guotong Du.(2016).Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes.Superlattices and Microstructures,96,220-225.
MLA Wei Liu,et al."Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes".Superlattices and Microstructures 96(2016):220-225.
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