Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes | |
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du | |
2016 | |
Source Publication | Journal of Physics D: Applied Physics
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Volume | 49Issue:14Pages:145104 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2017-03-10 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27875 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Wei Liu,Degang Zhao,Desheng Jiang,等. Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes[J]. Journal of Physics D: Applied Physics,2016,49(14):145104. |
APA | Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Zongshun Liu.,...&Guotong Du.(2016).Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes.Journal of Physics D: Applied Physics,49(14),145104. |
MLA | Wei Liu,et al."Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes".Journal of Physics D: Applied Physics 49.14(2016):145104. |
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Shockley–Read–Hall r(600KB) | 限制开放 | License | Application Full Text |
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