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Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
2016
Source PublicationJournal of Physics D: Applied Physics
Volume49Issue:14Pages:145104
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27875
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Wei Liu,Degang Zhao,Desheng Jiang,等. Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes[J]. Journal of Physics D: Applied Physics,2016,49(14):145104.
APA Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Zongshun Liu.,...&Guotong Du.(2016).Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes.Journal of Physics D: Applied Physics,49(14),145104.
MLA Wei Liu,et al."Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes".Journal of Physics D: Applied Physics 49.14(2016):145104.
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