| Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes | |
| Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du | |
| 2016 | |
| Source Publication | Journal of Physics D: Applied Physics
 |
| Volume | 49Issue:14Pages:145104 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2017-03-10 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27875 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Wei Liu,Degang Zhao,Desheng Jiang,等. Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes[J]. Journal of Physics D: Applied Physics,2016,49(14):145104. |
| APA | Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Zongshun Liu.,...&Guotong Du.(2016).Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes.Journal of Physics D: Applied Physics,49(14),145104. |
| MLA | Wei Liu,et al."Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes".Journal of Physics D: Applied Physics 49.14(2016):145104. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Shockley–Read–Hall r（600KB） | 限制开放 | License | Application Full Text | |||
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