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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
2016
Source PublicationApplied Physics A
Volume122Issue:9
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27873
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
F. Liang,P. Chen,D. G. Zhao,et al. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD[J]. Applied Physics A,2016,122(9).
APA F. Liang.,P. Chen.,D. G. Zhao.,D. S. Jiang.,Z. J. Zhao.,...&G. T. Du.(2016).Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD.Applied Physics A,122(9).
MLA F. Liang,et al."Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD".Applied Physics A 122.9(2016).
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